| PART |
Description |
Maker |
| HY5S5B6GLFP-SE HY5S5B6GLF-H |
256Mbit (16Mx16bit) Mobile SDR Memory
16M X 16 SYNCHRONOUS DRAM, 6.5 ns, PBGA54
|
http://
HYNIX SEMICONDUCTOR INC
|
| HY27SS561M HY27US08561M HY27SS16561M HY27US561M HY |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
Hynix Semiconductor Inc.
|
| MT48H8M32LF |
Mobile Low-Power SDR SDRAM
|
Micron Technology
|
| V53C1256162VALS10 V53C1256162VALS10E V53C1256162VA |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| MB82DBS08314A-80L |
256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| CYD36S18V18-167BGXC CYD36S36V18-167BGXC CYD36S36V1 |
FullFlex(TM) Synchronous SDR Dual-Port SRAM; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 2M X 18 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex(TM) Synchronous SDR Dual Port SRAM; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 1M X 36 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 1M X 36 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 256K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 4 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 3.3 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
|
Cypress Semiconductor, Corp.
|
| K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MOC |
Applications: Wired Network, Automotive, Mobile Communication, WiMAX, WLAN, Mobile
|
MERITEK ELECTRONICS COR...
|
| HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
